[P-6-8] High performance 70 nm In0.8GaP/In0.4AlAs/In0.35GaAs Metamorphic HEMT With Pd Schottky Contacts Sungwon Kim、Yumin Koh、Kwangseok Seo (1.Seoul National Univ., School of Electrical Eng.) https://doi.org/10.7567/SSDM.2007.P-6-8
