GaN Ultraviolet MSM Photodetectors by capping a Low-Temperature AlN Layer

K. H. Lee; P. C. Chang; Y. C. Wang; C. L. Yu; S. J. Chang

doi:https://doi.org/10.7567/SSDM.2007.P-7-15

2007 International Conference on Solid State Devices and Materials

2007年9月18日〜 2007年9月21日
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[P-7-15] GaN Ultraviolet MSM Photodetectors by capping a Low-Temperature AlN Layer

K. H. Lee、P. C. Chang、Y. C. Wang、C. L. Yu、S. J. Chang (1.Institute of Microelectronics and Department of Electrical Engineering, National Cheng Kung University、2.Department of Electronic Engineering, Nan Jeon Institute of Technology)

https://doi.org/10.7567/SSDM.2007.P-7-15

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