Steep On-Off Ratio of Photocurrent through Metal-Oxide-Semiconductor Tunneling Structures

Ryuta Yamada; Hideaki Hashimoto; Kenta Arima; Junichi Uchikoshi; Mizuho Morita

doi:https://doi.org/10.7567/SSDM.2007.P-7-4

2007 International Conference on Solid State Devices and Materials

2007年9月18日〜 2007年9月21日
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[P-7-4] Steep On-Off Ratio of Photocurrent through Metal-Oxide-Semiconductor Tunneling Structures

Ryuta Yamada、Hideaki Hashimoto、Kenta Arima、Junichi Uchikoshi、Mizuho Morita (1.Department of Precision Science and Technology, Graduate School of Engineering, Osaka University)

https://doi.org/10.7567/SSDM.2007.P-7-4

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