High Quality Crack-Free GaN-Based Epitaxy on Patterned Si(111) Substrate

Seung-Jae Lee; Gyu-Hyung Bak; Seong-Ran Jeon; Sang Hern Lee; Sangmook Kim; Seong-Hoon Jeong; Jong-Hyeob Baek

doi:https://doi.org/10.7567/SSDM.2007.P-8-7

2007 International Conference on Solid State Devices and Materials

Sep 18, 2007 - Sep 21, 2007
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[P-8-7] High Quality Crack-Free GaN-Based Epitaxy on Patterned Si(111) Substrate

Seung-Jae Lee, Gyu-Hyung Bak, Seong-Ran Jeon, Sang Hern Lee, Sangmook Kim, Seong-Hoon Jeong, Jong-Hyeob Baek (1.Korea Photonics Technology Institute (KOPTI))

https://doi.org/10.7567/SSDM.2007.P-8-7

▲