The Elimination of Inversion Domains in MBE-GaN Grown Using Low Temperature Nitridation

Jet-Chung Chang; Tsung-Hsi Yang; Shih-Guo Shen; Yi-Cheng Chen; Jui-Tai Ku; Chun-Yen Chang

doi:https://doi.org/10.7567/SSDM.2007.P-8-9

[P-8-9] The Elimination of Inversion Domains in MBE-GaN Grown Using Low Temperature Nitridation

Jet-Chung Chang, Tsung-Hsi Yang, Shih-Guo Shen, Yi-Cheng Chen, Jui-Tai Ku, Chun-Yen Chang (1.Department of Electronics Engineering, Nation Chiao Tung University, 2.Microelectronics and Information Systems Research Center, Nation Chiao Tung University, 3.Department of Electrophysics, Nation Chiao Tung University)

https://doi.org/10.7567/SSDM.2007.P-8-9

2007 International Conference on Solid State Devices and Materials

[P-8-9] The Elimination of Inversion Domains in MBE-GaN Grown Using Low Temperature Nitridation