[B-1-4] Evaluation of Electron and Hole Mobility at Identical MOS Interfaces by using Metal Source/Drain GOI MOSFETs

K. Morii¹、S. Dissanayake¹、S. Tanabe¹、R. Nakane¹、M. Takenaka¹、S. Sugahara²、S. Takagi¹ (1.Univ. of Tokyo、2.Tokyo Tech., Japan)

https://doi.org/10.7567/SSDM.2008.B-1-4