Low GIDL Characteristics on Fin-FET with Source/Drain Extension Engineering for 22nm Node Low Power Devices

K. Hayashi; T. Iwamatsu; R. Tsuchiya; K. Ishikawa; T. Terada; H. Shinohara; K. Eikyu; T. Uchida; H. Oda; Y. Inoue

doi:https://doi.org/10.7567/SSDM.2008.B-3-1

2008 International Conference on Solid State Devices and Materials

2008年9月23日〜 2008年9月26日
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[B-3-1] Low GIDL Characteristics on Fin-FET with Source/Drain Extension Engineering for 22nm Node Low Power Devices

K. Hayashi¹、T. Iwamatsu¹、R. Tsuchiya²、K. Ishikawa¹、T. Terada¹、H. Shinohara¹、K. Eikyu¹、T. Uchida¹、H. Oda¹、Y. Inoue¹ (1.Renesas Tech. Corp.、2.Hitachi, Ltd., Japan)

https://doi.org/10.7567/SSDM.2008.B-3-1

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