The Japan Society of Applied Physics

[A-1-3] Counter-doping as a solution for multi threshold voltage on FDSOI MOSFETs with a single TiN/HfO2 gate stack

C. Buj-Dufournet1, F. Andrieu1, O. Faynot1, O. Weber1, F. Allain1, L. Tosti1, C. Fenouillet-Béranger1, D. Lafond1, S. Deleonibus1 (1.CEA-LETI/MINATEC)

https://doi.org/10.7567/SSDM.2009.A-1-3