[A-2-2] Temperature Coefficient of Threshold Voltage in Metal/High-k Gate Transistors with Various Thickness of TiN and Capping Layers

Y. Nishida^1,2, K. Eikyu¹, A. Shimizu¹, T. Yamashita¹, H. Oda¹, Y. Inoue¹, K. Shibahara² (1.Renesas Tech. Corp.(Japan), 2.Hiroshima Univ.(Japan))

https://doi.org/10.7567/SSDM.2009.A-2-2