Grain boundary effect on charge transport in pentacene thin films

M. Weis; K. Gmucova; V. Nadazdy; D. Hasko; D. Taguchi; T. Manaka; M. Iwamoto

doi:https://doi.org/10.7567/SSDM.2010.A-2-3

2010 International Conference on Solid State Devices and Materials

2010年9月21日〜 2010年9月24日
The University of Tokyo, Tokyo, Japan

[A-2-3] Grain boundary effect on charge transport in pentacene thin films

M. Weis¹、K. Gmucova¹、V. Nadazdy¹、D. Hasko²、D. Taguchi³、T. Manaka³、M. Iwamoto³ (1.Slovak Academy of Sciences、2.International Laser Centre , Slovakia、3.Tokyo Tech. , Japan)

https://doi.org/10.7567/SSDM.2010.A-2-3

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