3 V-driven flexible organic transistors with mobility exceeding 2 cm<sup>2</sup>/Vs

K. Fukuda; N. Uchiyama; T. Sekitani; U. Zschieschang; H. Klauk; T. Yamamoto; K. Takimiya; T. Someya

doi:https://doi.org/10.7567/SSDM.2010.A-8-2

2010 International Conference on Solid State Devices and Materials

2010年9月21日〜 2010年9月24日
The University of Tokyo, Tokyo, Japan

[A-8-2] 3 V-driven flexible organic transistors with mobility exceeding 2 cm²/Vs

K. Fukuda¹、N. Uchiyama¹、T. Sekitani¹、U. Zschieschang²、H. Klauk²、T. Yamamoto³、K. Takimiya³、T. Someya¹ (1.Univ. of Tokyo , Japan、2.Max Planck Inst. , Germany、3.Hiroshima Univ. , Japan)

https://doi.org/10.7567/SSDM.2010.A-8-2

▲

2010 International Conference on Solid State Devices and Materials

[A-8-2] 3 V-driven flexible organic transistors with mobility exceeding 2 cm2/Vs

[A-8-2] 3 V-driven flexible organic transistors with mobility exceeding 2 cm²/Vs