[A-9-1] Excellent interface properties of pentacene based metal-oxide-semiconductor diodes utilizing HfON higk-k gate insulator

M. Liao¹、Y. U. Song¹、J. Ishikawa¹、T. Sano¹、J. Gao¹、H. Ishiwara¹、S. Ohmi¹ (1.Tokyo Tech , Japan)

https://doi.org/10.7567/SSDM.2010.A-9-1