[A-9-1] Excellent interface properties of pentacene based metal-oxide-semiconductor diodes utilizing HfON higk-k gate insulator

M. Liao¹, Y. U. Song¹, J. Ishikawa¹, T. Sano¹, J. Gao¹, H. Ishiwara¹, S. Ohmi¹ (1.Tokyo Tech , Japan)

https://doi.org/10.7567/SSDM.2010.A-9-1