[A-9-2] Oxygen Plasma Process of Self-assembled Monolayer Gate Dielectric for 2-V Operation High-mobility Organic TFT

K. Kuribara¹、T. Nakagawa¹、K. Fukuda¹、T. Yokota¹、T. Sekitani¹、U. Zschieschang²、H. Klauk²、T. Someya¹、T. Yamamoto³、K. Takimiya³ (1.Univ. of Tokyo , Japan、2.Max Planck Inst for Solid State Res. , Germany、3.Hiroshima Univ. , Japan)

https://doi.org/10.7567/SSDM.2010.A-9-2