[B-1-1] Defect-Free GOI (Ge on Insulator) by SiGe Mixing-Triggered Liquid-Phase Epitaxy

M. Miyao¹, K. Toko^1,2, M. Kurosawa^1,2, T. Sadoh^1,2 (1.Kyushu Univ., 2.JSPS , Japan)

https://doi.org/10.7567/SSDM.2010.B-1-1