[B-1-2] Advantage of High-pressure Oxidation for Ge/GeO₂ Stack Formation

C. H. Lee¹, T. Nishimura^1,2, T. Tabata¹, S. Wang¹, K. Nagashio^1,2, K. Kita^1,2, A. Toriumi^1,2 (1.Univ. of Tokyo, 2.JST-CREST , Japan)

https://doi.org/10.7567/SSDM.2010.B-1-2