The Japan Society of Applied Physics

[B-2-2] Single-Crystalline (100) Ge Stripes with High Mobilities Formed on Insulating Substrates by Rapid-Melting-Growth with Artificial Single-Crystal Si Seeds

K. Toko1、T. Sakane1、H. Yokoyama1、M. Kurosawa1、T. Sadoh1、M. Miyao1 (1.Kyushu Univ. , Japan)

https://doi.org/10.7567/SSDM.2010.B-2-2