[B-2-2] Single-Crystalline (100) Ge Stripes with High Mobilities Formed on Insulating Substrates by Rapid-Melting-Growth with Artificial Single-Crystal Si Seeds

K. Toko¹、T. Sakane¹、H. Yokoyama¹、M. Kurosawa¹、T. Sadoh¹、M. Miyao¹ (1.Kyushu Univ. , Japan)

https://doi.org/10.7567/SSDM.2010.B-2-2