[B-5-2] Mobility Degradation and Interface Dipole Formation in Direct-Contact HfO₂/Si MOSFETs

N. Miyata¹、H. Ishii¹、T. Itatani¹、T. Yasuda¹ (1.AIST , Japan)

https://doi.org/10.7567/SSDM.2010.B-5-2