[C-1-3] Drastic reduction of the low frequency noise in Si(100) p-MOSFETs

P. Gaubert¹、A. Teramoto¹、R. Kuroda¹、Y. Nakao¹、H. Tanaka¹、T. Ohmi¹ (1.Tohoku Univ. , Japan)

https://doi.org/10.7567/SSDM.2010.C-1-3