[C-2-1] Abrupt Source Heterostructures with Lateral-Relaxed/Strained Layers for Quasi-Ballistic CMOS Transistors using Lateral Strain Control Technique of Strained Substrates
T. Mizuno1,2, M. Hasegawa1, K. Ikeda3, M. Nojiri4, T. Horikawa2
(1.Kanagawa Univ., 2.MIRAI-NIRC, 3.MIRAI-Toshiba, 4.AIST , Japan)
https://doi.org/10.7567/SSDM.2010.C-2-1