Abrupt Source Heterostructures with Lateral-Relaxed/Strained Layers for Quasi-Ballistic CMOS Transistors using Lateral Strain Control Technique of Strained Substrates

[C-2-1] Abrupt Source Heterostructures with Lateral-Relaxed/Strained Layers for Quasi-Ballistic CMOS Transistors using Lateral Strain Control Technique of Strained Substrates

T. Mizuno^1,2, M. Hasegawa¹, K. Ikeda³, M. Nojiri⁴, T. Horikawa² (1.Kanagawa Univ., 2.MIRAI-NIRC, 3.MIRAI-Toshiba, 4.AIST , Japan)