The Japan Society of Applied Physics

[C-3-3] Drive Current Improvement in Si Tunnel Field Effect Transistors by means of Silicide Engineering

D. Leonelli1,2, A. Vandooren1, R. Rooyackers1, A. S. Verhulst1, S. De Gendt1,2, M. M. Heyns1,2, G. Groeseneken1,2 (1.IMEC, 2.Katholieke Univ. Leuven , Belgium)

https://doi.org/10.7567/SSDM.2010.C-3-3