Drive Current Improvement in Si Tunnel Field Effect Transistors by means of Silicide Engineering

D. Leonelli; A. Vandooren; R. Rooyackers; A. S. Verhulst; S. De Gendt; M. M. Heyns; G. Groeseneken

doi:https://doi.org/10.7567/SSDM.2010.C-3-3

2010 International Conference on Solid State Devices and Materials

Sep 21, 2010 - Sep 24, 2010
The University of Tokyo, Tokyo, Japan

[C-3-3] Drive Current Improvement in Si Tunnel Field Effect Transistors by means of Silicide Engineering

D. Leonelli^1,2, A. Vandooren¹, R. Rooyackers¹, A. S. Verhulst¹, S. De Gendt^1,2, M. M. Heyns^1,2, G. Groeseneken^1,2 (1.IMEC, 2.Katholieke Univ. Leuven , Belgium)

https://doi.org/10.7567/SSDM.2010.C-3-3

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