Drive Current Improvement in Si Tunnel Field Effect Transistors by means of Silicide Engineering

D. Leonelli; A. Vandooren; R. Rooyackers; A. S. Verhulst; S. De Gendt; M. M. Heyns; G. Groeseneken

doi:https://doi.org/10.7567/SSDM.2010.C-3-3

2010 International Conference on Solid State Devices and Materials

2010年9月21日〜 2010年9月24日
The University of Tokyo, Tokyo, Japan

[C-3-3] Drive Current Improvement in Si Tunnel Field Effect Transistors by means of Silicide Engineering

D. Leonelli^1,2、A. Vandooren¹、R. Rooyackers¹、A. S. Verhulst¹、S. De Gendt^1,2、M. M. Heyns^1,2、G. Groeseneken^1,2 (1.IMEC、2.Katholieke Univ. Leuven , Belgium)

https://doi.org/10.7567/SSDM.2010.C-3-3

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