[C-4-1] Effective Suppression of Random-Dopant-Induced Characteristic Fluctuation Using Dual Material Gate Technique for 16 nm MOSFET Devices

K. F. Lee¹、Y. Li¹、C. Y. Yiu¹、T. T. Khaing¹ (1.National Chiao Tung Univ. , Taiwan)

https://doi.org/10.7567/SSDM.2010.C-4-1