High Temperature Characteristic of Radom Variability of Drain Current in Scaled FETs

T. Tsunomura; A. Kumar; T. Mizutani; A. Nishida; K. Takeuchi; S. Inaba; S. Kamohara; K. Terada; T. Hiramoto; T. Mogami

doi:https://doi.org/10.7567/SSDM.2010.C-4-2

[C-4-2] High Temperature Characteristic of Radom Variability of Drain Current in Scaled FETs

T. Tsunomura¹, A. Kumar², T. Mizutani², A. Nishida¹, K. Takeuchi¹, S. Inaba¹, S. Kamohara¹, K. Terada³, T. Hiramoto^1,2, T. Mogami¹ (1.MIRAI-Selete, 2.Univ. of Tokyo, 3.Hiroshima City Univ. , Japan)

https://doi.org/10.7567/SSDM.2010.C-4-2

2010 International Conference on Solid State Devices and Materials

[C-4-2] High Temperature Characteristic of Radom Variability of Drain Current in Scaled FETs