[C-4-3] Device Engineering to Improve SRAM Static Noise Margin

J. Luo¹, L. Wei¹, F. Boeuf², D. Antoniadis³, T. Skotnicki², H. S. P. Wong¹ (1.Stanford Univ. , USA, 2.STMicroelectronics , France, 3.MIT , USA)

https://doi.org/10.7567/SSDM.2010.C-4-3