[C-7-3] Advantage of Plasma Doping for Source/Drain Extension in Bulk-FinFET

T. Izumida¹、K. Okano¹、T. Kanemura¹、M. Kondo¹、S. Inaba¹、S. Itoh¹、N. Aoki¹、Y. Toyoshima¹ (1.Toshiba Corp. , Japan)

https://doi.org/10.7567/SSDM.2010.C-7-3