[C-7-3] Advantage of Plasma Doping for Source/Drain Extension in Bulk-FinFET

T. Izumida¹, K. Okano¹, T. Kanemura¹, M. Kondo¹, S. Inaba¹, S. Itoh¹, N. Aoki¹, Y. Toyoshima¹ (1.Toshiba Corp. , Japan)

https://doi.org/10.7567/SSDM.2010.C-7-3