[D-3-4] High performance GaN-based light emitting diodes grown on 4-inch Si (111)

Y. Zhu¹、A. Watanabe¹、L. Lu¹、Z. Chen¹、T. Egawa¹ (1.Nagoya Inst. of Tech. , Japan)

https://doi.org/10.7567/SSDM.2010.D-3-4