The Japan Society of Applied Physics

[D-3-5] GaN based Light Emitting Diode with Enhanced Optical Output and Improved Luminescence by employing Excimer Laser Irradiation in contact formation

G. H. Wang1、T. Sudhiranjan1、T. C. Wong1、X. Wang2、H. Y. Zheng2、T. K. Chan3、T. Osipowicz3、Y. L. Foo1 (1.Inst. of Materials Res. And Eng.、2.Singapore Inst. Of Manufacturing Tech.、3.National Univ. of Singapore , Singapore)

https://doi.org/10.7567/SSDM.2010.D-3-5