GaN based Light Emitting Diode with Enhanced Optical Output and Improved Luminescence by employing Excimer Laser Irradiation in contact formation

G. H. Wang; T. Sudhiranjan; T. C. Wong; X. Wang; H. Y. Zheng; T. K. Chan; T. Osipowicz; Y. L. Foo

doi:https://doi.org/10.7567/SSDM.2010.D-3-5

[D-3-5] GaN based Light Emitting Diode with Enhanced Optical Output and Improved Luminescence by employing Excimer Laser Irradiation in contact formation

G. H. Wang¹, T. Sudhiranjan¹, T. C. Wong¹, X. Wang², H. Y. Zheng², T. K. Chan³, T. Osipowicz³, Y. L. Foo¹ (1.Inst. of Materials Res. And Eng., 2.Singapore Inst. Of Manufacturing Tech., 3.National Univ. of Singapore , Singapore)

https://doi.org/10.7567/SSDM.2010.D-3-5

2010 International Conference on Solid State Devices and Materials

[D-3-5] GaN based Light Emitting Diode with Enhanced Optical Output and Improved Luminescence by employing Excimer Laser Irradiation in contact formation