[D-3-5] GaN based Light Emitting Diode with Enhanced Optical Output and Improved Luminescence by employing Excimer Laser Irradiation in contact formation

G. H. Wang¹、T. Sudhiranjan¹、T. C. Wong¹、X. Wang²、H. Y. Zheng²、T. K. Chan³、T. Osipowicz³、Y. L. Foo¹ (1.Inst. of Materials Res. And Eng.、2.Singapore Inst. Of Manufacturing Tech.、3.National Univ. of Singapore , Singapore)

https://doi.org/10.7567/SSDM.2010.D-3-5