[D-5-5L] Effects of tunneling barrier width on the electrical characteristic in Si-QD LEDs

T. Y. Kim^1,3, N. M. Park¹, C. J. Choi², C. Huh¹, C. G. Ahn¹, G. Y. Sung¹, I. K. You¹, M. Suemitsu³ (1.Electronics and Telecommunications Res. Inst., 2.Univ. of Chonbuk , Korea, 3.Tohoku Univ. , Japan)

https://doi.org/10.7567/SSDM.2010.D-5-5L