[E-2-3] The Evaluation Method and Characteristics of IPD layer in TLC (Triple Level Cell) NAND Flash

B. D. Jo¹, Y. Jeong¹, J. Y. Park¹, P. H. Kim¹, S. J. Park¹, M. K. Cho¹, K. O. Ahn¹, Y. Koh¹ (1.Hynix Semiconductor Inc. , Korea)

https://doi.org/10.7567/SSDM.2010.E-2-3