[E-9-2] A New Tunneling Barrier Width Model of the Switching Mechanism in Hafnium Oxide-Based Resistive Random Access Memory

Y. H. Tseng¹, S. S. Chung^1,2, S. Shin², S. S. M. Kang², H. Y. Lee³, M. J. Tsai³ (1.National Chiao Tung Univ. , Taiwan, 2.Univ. of California, Merced , USA, 3.ITRI , Taiwan)

https://doi.org/10.7567/SSDM.2010.E-9-2