[E-9-2] A New Tunneling Barrier Width Model of the Switching Mechanism in Hafnium Oxide-Based Resistive Random Access Memory

Y. H. Tseng¹、S. S. Chung^1,2、S. Shin²、S. S. M. Kang²、H. Y. Lee³、M. J. Tsai³ (1.National Chiao Tung Univ. , Taiwan、2.Univ. of California, Merced , USA、3.ITRI , Taiwan)

https://doi.org/10.7567/SSDM.2010.E-9-2