The Japan Society of Applied Physics

[E-9-4] Effects of Reactive Ti Creating Oxygen Vacancy Inside TiO2 on Resistive Switching Characteristics in Resistive Random Access Memory Device

S. J. Kim1、M. G. Sung1、W. G. Kim1、J. Y. Kim1、J. H. Yoo1、J. N. Kim1、B. G. Gyun1、J. Y. Byun1、M. S. Joo1、J. S. Roh1、S. K. Park1 (1.Hynix Semiconductor Inc. , Korea)

https://doi.org/10.7567/SSDM.2010.E-9-4