[E-9-4] Effects of Reactive Ti Creating Oxygen Vacancy Inside TiO₂ on Resistive Switching Characteristics in Resistive Random Access Memory Device

S. J. Kim¹、M. G. Sung¹、W. G. Kim¹、J. Y. Kim¹、J. H. Yoo¹、J. N. Kim¹、B. G. Gyun¹、J. Y. Byun¹、M. S. Joo¹、J. S. Roh¹、S. K. Park¹ (1.Hynix Semiconductor Inc. , Korea)

https://doi.org/10.7567/SSDM.2010.E-9-4