Drive Current Enhancement with Invasive Source in Double Gate Tunneling Field-Effect Transistors

2010 International Conference on Solid State Devices and Materials

Sep 21, 2010 - Sep 24, 2010
The University of Tokyo, Tokyo, Japan

Y. Yang¹, P. F. Guo¹, G. Q. Han¹, C. L. Zhan¹, L. Fan¹, Y. C. Yeo¹ (1.National Univ. of Singapore , Singapore)