Magnetic anisotropy of GaMnAs and its application for multi-valued memory device

2010 International Conference on Solid State Devices and Materials

Sep 21, 2010 - Sep 24, 2010
The University of Tokyo, Tokyo, Japan

S. Lee¹, T. Yoo¹, S. Khym¹, H. Lee¹, S. Kim¹, J. Shin¹, X. Liu², J. K. Furdyna² (1.Korea Univ. , Korea, 2.Univ. of Notre Dame , USA)