[F-8-1] Magnetic anisotropy of GaMnAs and its application for multi-valued memory device

S. Lee¹、T. Yoo¹、S. Khym¹、H. Lee¹、S. Kim¹、J. Shin¹、X. Liu²、J. K. Furdyna² (1.Korea Univ. , Korea、2.Univ. of Notre Dame , USA)

https://doi.org/10.7567/SSDM.2010.F-8-1