[H-2-4] TEM characterization of epitaxial graphene formed on Si(111), Si(110), Si(100)

H. Handa¹、R. Takahashi¹、S. Abe¹、K. Imaizumi¹、M. H. Jung¹、S. Ito¹、H. Fukidome¹、M. Suemitsu^1,2 (1.Tohoku Univ.、2.CREST-JST , Japan)

https://doi.org/10.7567/SSDM.2010.H-2-4