[H-6-2] Migration of Copper through Tungsten-Filled Via on Single Damascene Copper Interconnect
B. M. Kim1, J. J. Kim1, B. M. Seo1, J. S. Oh1, J. Y. Cho1, J. Lee1, K. Hong1, B. H. Choi1, S. Park1
(1.Hynix Semiconductor Inc. , Korea)
https://doi.org/10.7567/SSDM.2010.H-6-2
