[H-6-2] Migration of Copper through Tungsten-Filled Via on Single Damascene Copper Interconnect

B. M. Kim¹、J. J. Kim¹、B. M. Seo¹、J. S. Oh¹、J. Y. Cho¹、J. Lee¹、K. Hong¹、B. H. Choi¹、S. Park¹ (1.Hynix Semiconductor Inc. , Korea)

https://doi.org/10.7567/SSDM.2010.H-6-2