Structure Analyses of Ti-Based Self-Formed Barrier Layers

K. Kohama; K. Ito; Y. Sonobayashi; K. Ohmori; K. Mori; K. Maekawa; Y. Shirai; M. Murakami

doi:https://doi.org/10.7567/SSDM.2010.H-6-4

2010 International Conference on Solid State Devices and Materials

2010年9月21日〜 2010年9月24日
The University of Tokyo, Tokyo, Japan

[H-6-4] Structure Analyses of Ti-Based Self-Formed Barrier Layers

K. Kohama¹、K. Ito¹、Y. Sonobayashi¹、K. Ohmori²、K. Mori²、K. Maekawa²、Y. Shirai¹、M. Murakami³ (1.Kyoto Univ.、2.Renesas Electronics. Corp.、3.The Ritsumeikan Trust , Japan)

https://doi.org/10.7567/SSDM.2010.H-6-4

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