Structure Analyses of Ti-Based Self-Formed Barrier Layers

K. Kohama; K. Ito; Y. Sonobayashi; K. Ohmori; K. Mori; K. Maekawa; Y. Shirai; M. Murakami

doi:https://doi.org/10.7567/SSDM.2010.H-6-4

2010 International Conference on Solid State Devices and Materials

Sep 21, 2010 - Sep 24, 2010
The University of Tokyo, Tokyo, Japan

[H-6-4] Structure Analyses of Ti-Based Self-Formed Barrier Layers

K. Kohama¹, K. Ito¹, Y. Sonobayashi¹, K. Ohmori², K. Mori², K. Maekawa², Y. Shirai¹, M. Murakami³ (1.Kyoto Univ., 2.Renesas Electronics. Corp., 3.The Ritsumeikan Trust , Japan)

https://doi.org/10.7567/SSDM.2010.H-6-4

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