[I-2-3] Suppression of gate leakage and enhancement of breakdown voltage using Al₂O₃ nano particles as gate dielectric for AlGaN/GaN MOS-HEMTs

J. Freedsman¹、T. Kubo¹、A. Watanabe¹、S. L. Selvaraj¹、T. Egawa¹ (1.Nagoya Inst. of Tech. , Japan)

https://doi.org/10.7567/SSDM.2010.I-2-3