[I-3-4] Dependence of Optical Response Time on Gate-to-Source Voltage for InAlAs/InAs/InGaAs Pseudomorphic High Electron Mobility Transistors

T. Ando¹、H. Taguchi¹、K. Uchimura¹、M. Mochiduki¹、T. Iida¹、Y. Takanashi¹ (1.Tokyo Univ. of Sci. , Japan)

https://doi.org/10.7567/SSDM.2010.I-3-4